30ma surface mount schottky barrier diode 1 of 2 features features mechanical data a c b dim min max a 3.30 3.70 b 1.30 1.60 c 0.28 0.50 all dimensions in mm @ t a = 25 c unless otherwise specified maximum ratings and electrical characteristics sod-80 case: minimelf glass case (sod80) weight: approx. 31 mg cathode band color: black packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box component in accordance to rohs 2002/95/ec lead (pb)-free component this diode is also available in the do35 case with low leakage current low capacitance integrated protection ring against static discharge the low forward voltage drop and fast the ll101 series for general purpose applications is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring. switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low lo gic level applications. type designation sd101a, b, c and in the sod123 case with type designation sd101aw, sd101bw, sd101cw. and weee 2002/96/ec 1) valid provided that electrodes ar e kept at ambient temperature parameter test condition part symbol value unit peak inverse voltage LL101A v rrm 60 v ll101b v rrm 50 v ll101c v rrm 40 v power dissipation (infinite heatsink) p tot 400 1) mw forward continuous current i f 30 ma maximum single cycle surge 10 s square wave i fsm 2a LL101A-ll101c
2 of 2 parameter test condition part symbol min ty p. max unit reverse breakdown voltage i r = 10 a LL101A v (br)r 60 v ll101b v (br)r 50 v ll101c v (br)r 40 v leakage current v r = 50 v LL101A i r 200 na v r = 50v ll101b i r 200 na v r = 50 v ll101c i r 200 na forward voltage drop i f = 1 ma LL101A v f 410 mv i f = 1ma ll101b v f 400 mv i f = 1 ma ll101c v f 390 mv i f = 15 ma LL101A v f 1000 mv ll101b v f 950 mv ll101c v f 900 mv diode capacitance v r = 0 v, f = 1 mhz LL101A c d 2.0 pf v r = 0 v, f = 1 mhz ll101b c d 2.1 pf ll101c c d 2.2 pf reverse recovery time i f = i r = 5 ma, recover to 0.1 i r t rr 1ns figure 1. typ. i f vs. v f for primary conduction through the schottky barrier gLL101A_01 figure 2. typ. i f of combination schottky barrrier and pn junction guard ring gLL101A_02 figure 3. typical variation of reverse current at various temperatures gLL101A_03 figure 4. typical capacitance curve as a function of reverse voltage gLL101A_04
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